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SiHG068N60EF PDF预览

SiHG068N60EF

更新时间: 2024-11-03 14:52:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 471K
描述
EF Series Power MOSFET With Fast Body Diode

SiHG068N60EF 数据手册

 浏览型号SiHG068N60EF的Datasheet PDF文件第2页浏览型号SiHG068N60EF的Datasheet PDF文件第3页浏览型号SiHG068N60EF的Datasheet PDF文件第4页浏览型号SiHG068N60EF的Datasheet PDF文件第5页浏览型号SiHG068N60EF的Datasheet PDF文件第6页浏览型号SiHG068N60EF的Datasheet PDF文件第7页 
SiHG068N60EF  
www.vishay.com  
Vishay Siliconix  
EF Series Power MOSFET With Fast Body Diode  
FEATURES  
D
• 4th generation E series technology  
TO-247AC  
• Low figure-of-merit (FOM) Ron x Qg  
• Low effective capacitance (Co(er)  
)
G
• Reduced switching and conduction losses  
• Avalanche energy rated (UIS)  
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
D
S
G
N-Channel MOSFET  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
650  
RDS(on) typ. () at 25 °C  
VGS = 10 V  
0.059  
Qg max. (nC)  
77  
19  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
Q
gs (nC)  
gd (nC)  
Q
16  
Configuration  
Single  
- Welding  
- Motor drives  
- Battery chargers  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
TO-247AC  
Lead (Pb)-free and halogen-free  
SiHG068N60EF-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
600  
V
VGS  
30  
T
C = 25 °C  
41  
26  
Continuous drain current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed drain current a  
IDM  
115  
Linear derating factor  
Single pulse avalanche energy b  
2
W/°C  
mJ  
W
EAS  
PD  
226  
Maximum power dissipation  
250  
Operating junction and storage temperature range  
Drain-source voltage slope  
Reverse diode dV/dt d  
TJ, Tstg  
-55 to +150  
100  
°C  
TJ = 125 °C  
For 10 s  
dV/dt  
V/ns  
°C  
50  
Soldering recommendations (peak temperature) c  
260  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4 A  
c. 1.6 mm from case  
d. ISD ID, di/dt = 210 A/μs, starting TJ = 25 °C  
S20-0337-Rev. B, 11-May-2020  
Document Number: 92308  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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