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SiHG14N50D PDF预览

SiHG14N50D

更新时间: 2024-11-03 14:55:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 472K
描述
D Series Power MOSFET

SiHG14N50D 数据手册

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SiHG14N50D  
Vishay Siliconix  
www.vishay.com  
D Series Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
• Optimal Design  
VDS (V) at TJ max.  
DS(on) max. at 25 °C ()  
Qg (Max.) (nC)  
550  
- Low Area Specific On-Resistance  
- Low Input Capacitance (Ciss  
- Reduced Capacitive Switching Losses  
- High Body Diode Ruggedness  
- Avalanche Energy Rated (UIS)  
• Optimal Efficiency and Operation  
- Low Cost  
R
VGS = 10 V  
0.4  
)
58  
8
Q
gs (nC)  
gd (nC)  
Q
14  
Configuration  
Single  
D
- Simple Gate Drive Circuitry  
- Low Figure-of-Merit (FOM): Ron x Qg  
- Fast Switching  
TO-247AC  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
G
Note  
* Lead (Pb)-containing terminations are not RoHS-compliant.  
Exemptions may apply.  
S
D
S
G
N-Channel MOSFET  
APPLICATIONS  
• Consumer Electronics  
- Displays (LCD or Plasma TV)  
• Server and Telecom Power Supplies  
- SMPS  
• Industrial  
- Welding, Induction Heating, Motor Drives  
• Battery Chargers  
ORDERING INFORMATION  
Package  
TO-247AC  
Lead (Pb)-free  
SiHG14N50D-E3  
Lead (Pb)-free and Halogen-free  
SiHG14N50D-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
Gate-Source Voltage AC (f > 1 Hz)  
VDS  
500  
30  
V
VGS  
30  
TC = 25 °C  
TC =100 °C  
14  
Continuous Drain Current (TJ = 150 °C)  
VGS at 10 V  
ID  
9
A
Pulsed Drain Currenta  
IDM  
38  
Linear Derating Factor  
Single Pulse Avalanche Energyb  
1.6  
W/°C  
mJ  
W
EAS  
PD  
56  
208  
Maximum Power Dissipation  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dtd  
TJ, Tstg  
- 55 to + 150  
24  
°C  
TJ = 125 °C  
dV/dt  
V/ns  
°C  
0.4  
300c  
Soldering Recommendations (Peak Temperature)  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 7 A.  
c. 1.6 mm from case.  
d. ISD ID, starting TJ = 25 °C.  
S12-1229-Rev. A, 21-May-12  
Document Number: 91513  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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