SiHG150N60E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
D
• 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er)
TO-247AC
)
G
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
D
S
G
N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
PRODUCT SUMMARY
VDS (V) at TJ max.
650
RDS(on) typ. () at 25 °C
VGS = 10 V
0.137
Qg max. (nC)
36
10
Q
gs (nC)
gd (nC)
Q
6
- Welding
- Induction heating
Configuration
Single
- Motor drives
- Battery chargers
- Solar (PV inverters)
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free and halogen-free
SiHG150N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
VDS
600
V
VGS
30
T
C = 25 °C
22
14
Continuous drain current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
A
Pulsed drain current a
IDM
43
Linear derating factor
Single pulse avalanche energy b
1.42
111
W/°C
mJ
W
EAS
PD
Maximum power dissipation
179
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dv/dt d
TJ, Tstg
-55 to +150
100
°C
TJ = 125 °C
For 10 s
dv/dt
V/ns
°C
5
Soldering recommendations (peak temperature) c
260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2.8 A
c. 1.6 mm from case
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
S23-0233-Rev. B, 17-April.2023
Document Number: 92450
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000