5秒后页面跳转
SIHG22N60E_13 PDF预览

SIHG22N60E_13

更新时间: 2024-10-14 12:14:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 185K
描述
E Series Power MOSFET

SIHG22N60E_13 数据手册

 浏览型号SIHG22N60E_13的Datasheet PDF文件第2页浏览型号SIHG22N60E_13的Datasheet PDF文件第3页浏览型号SIHG22N60E_13的Datasheet PDF文件第4页浏览型号SIHG22N60E_13的Datasheet PDF文件第5页浏览型号SIHG22N60E_13的Datasheet PDF文件第6页浏览型号SIHG22N60E_13的Datasheet PDF文件第7页 
SiHG22N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
• Low Figure-of-Merit (FOM) Ron x Qg  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
DS(on) max. at 25 °C ()  
Qg max. (nC)  
650  
• Low Input Capacitance (Ciss  
)
R
VGS = 10 V  
0.18  
• Reduced Switching and Conduction Losses  
• Ultra Low Gate Charge (Qg)  
86  
11  
Q
gs (nC)  
gd (nC)  
• Avalanche Energy Rated (UIS)  
Q
24  
• Material categorization: For definitions please see  
www.vishay.com/doc?99912  
Configuration  
Single  
APPLICATIONS  
• Server and Telecom Power Supplies  
• Switch Mode Power Supplies (SMPS)  
• Power Factor Correction Power Supplies (PFC)  
• Lighting  
TO-247AC  
D
- High-Intensity Discharge (HID)  
- Fluorescent Ballast Lighting  
• Industrial  
G
S
D
G
- Welding  
S
N-Channel MOSFET  
- Induction Heating  
- Motor Drives  
- Battery Chargers  
- Renewable Energy  
- Solar (PV Inverters)  
ORDERING INFORMATION  
Package  
TO-247AC  
SiHG22N60E-E3  
SiHG22N60E-GE3  
Lead (Pb)-free  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
600  
V
Gate-Source Voltage  
20  
VGS  
Gate-Source Voltage AC (f > 1 Hz)  
30  
TC = 25 °C  
C = 100 °C  
21  
Continuous Drain Current (TJ = 150 °C)  
VGS at 10 V  
ID  
T
13  
A
Pulsed Drain Currenta  
IDM  
56  
Linear Derating Factor  
Single Pulse Avalanche Energyb  
1.8  
W/°C  
mJ  
W
EAS  
PD  
367  
Maximum Power Dissipation  
227  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dtd  
TJ, Tstg  
- 55 to + 150  
°C  
TJ = 125 °C  
37  
11  
dV/dt  
V/ns  
°C  
Soldering Recommendations (Peak Temperature) c  
for 10 s  
300  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.  
c. 1.6 mm from case.  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
S13-0509-Rev. E, 11-Mar-13  
Document Number: 91473  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SIHG22N60E_13相关器件

型号 品牌 获取价格 描述 数据表
SiHG22N60E-E3 VISHAY

获取价格

E Series Power MOSFET
SiHG22N60EF VISHAY

获取价格

EF Series Power MOSFET With Fast Body Diode
SIHG22N60E-GE3 VISHAY

获取价格

E Series Power MOSFET
SiHG22N60EL VISHAY

获取价格

EL Series Power MOSFET
SIHG22N60S-E3 VISHAY

获取价格

600 V Power mosfets
SiHG22N65E VISHAY

获取价格

E Series Power MOSFET
SiHG23N60E VISHAY

获取价格

E Series Power MOSFET
SIHG24N65E VISHAY

获取价格

E Series Power MOSFET
SIHG24N65E_13 VISHAY

获取价格

E Series Power MOSFET
SIHG24N65E-E3 VISHAY

获取价格

E Series Power MOSFET