SiHG17N60D
Vishay Siliconix
www.vishay.com
D Series Power MOSFET
FEATURES
PRODUCT SUMMARY
• Optimal Design
VDS (V) at TJ max.
DS(on) max. at 25 °C ()
Qg (Max.) (nC)
650
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss
R
VGS = 10 V
0.340
)
90
14
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
Q
gs (nC)
gd (nC)
Q
22
Configuration
Single
D
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
TO-247AC
- Fast Switching
G
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
S
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
D
S
G
N-Channel MOSFET
• Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
• SMPS
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free
SiHG17N60D-E3
Lead (Pb)-free and Halogen-free
SiHG17N60D-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
600
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
30
T
C = 25 °C
17
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
TC =100 °C
10.7
A
Pulsed Drain Currenta
IDM
48
Linear Derating Factor
Single Pulse Avalanche Energyb
2.22
W/°C
mJ
W
EAS
PD
165.6
277.8
- 55 to + 150
24
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ, Tstg
°C
TJ = 125 °C
dV/dt
V/ns
°C
0.2
Soldering Recommendations (Peak Temperature)c
for 10 s
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 12 A.
c. 1.6 mm from case.
d. ISD ID, starting TJ = 25 °C.
S12-0685-Rev. A, 02-Apr-12
Document Number: 91496
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000