Datasheet > SIHG22N60E-GE3

SIHG22N60E-GE3

更新时间： 2024-11-25 09:25:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	175K
描述
E Series Power MOSFET

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SIHG22N60E-GE3 数据手册

SiHG22N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

PRODUCT SUMMARY

• Halogen-free According to IEC 61249-2-21

Definition

• Low Figure-of-Merit (FOM) R_onx Q_g

• Low Input Capacitance (C_iss

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_gmax. (nC)

650

V_GS= 10 V

0.18

)

_gs(nC)

_gd(nC)

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q_g)

Configuration

Single

• Avalanche Energy Rated (UIS)

• Compliant to RoHS Directive 2002/95/EC

TO-247AC

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

• Industrial

N-Channel MOSFET

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

ORDERING INFORMATION

Package

TO-247AC

SiHG22N60E-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

600

Gate-Source Voltage

V_GS

Gate-Source Voltage AC (f > 1 Hz)

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

1.8

367

W/°C

E_AS

P_D

Maximum Power Dissipation

227

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^d

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

dV/dt

V/ns

°C

300^c

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 5.1 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S11-2087 Rev. B, 31-Oct-11

Document Number: 91473

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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SIHG22N60E-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SiHG22N60E-E3	VISHAY	类似代替	E Series Power MOSFET
SPW20N60S5	INFINEON	功能相似	Cool MOS⑩ Power Transistor

与SIHG22N60E-GE3相关器件

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