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SiHG105N60EF PDF预览

SiHG105N60EF

更新时间: 2024-11-03 14:54:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 471K
描述
EF Series Power MOSFET With Fast Body Diode

SiHG105N60EF 数据手册

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SiHG105N60EF  
www.vishay.com  
Vishay Siliconix  
EF Series Power MOSFET With Fast Body Diode  
FEATURES  
D
• 4th generation E series technology  
TO-247AC  
• Low figure-of-merit (FOM) Ron x Qg  
• Low effective capacitance (Co(er)  
)
G
• Reduced switching and conduction losses  
• Avalanche energy rated (UIS)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
S
D
G
N-Channel MOSFET  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
650  
RDS(on) typ. () at 25 °C  
VGS = 10 V  
0.088  
Qg max. (nC)  
53  
12  
Q
gs (nC)  
gd (nC)  
Q
11  
- Welding  
- Induction heating  
Configuration  
Single  
- Motor drives  
- Battery chargers  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
TO-247AC  
Lead (Pb)-free and halogen-free  
SiHG105N60EF-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
600  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
30  
T
C = 25 °C  
29  
Continuous drain current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
19  
A
Pulsed drain current a  
IDM  
73  
Linear derating factor  
Single pulse avalanche energy b  
1.67  
226  
W/°C  
mJ  
W
EAS  
PD  
Maximum power dissipation  
208  
Operating junction and storage temperature range  
Drain-source voltage slope  
Reverse diode dv/dt d  
TJ, Tstg  
-55 to +150  
70  
°C  
TJ = 125 °C  
For 10 s  
dv/dt  
V/ns  
°C  
50  
Soldering recommendations (peak temperature) c  
260  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4 A  
c. 1.6 mm from case  
d. ISD ID, di/dt = 400 A/μs, starting TJ = 25 °C  
S19-1042-Rev. A, 09-Dec-2019  
Document Number: 92300  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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