SiHG080N60E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
D
• 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er)
TO-247AC
)
G
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
G
S
N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
PRODUCT SUMMARY
VDS (V) at TJ max.
650
RDS(on) typ. (Ω) at 25 °C
VGS = 10 V
0.070
Qg max. (nC)
63
19
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
Q
gs (nC)
gd (nC)
Q
10
Configuration
Single
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free and halogen-free
SIHG080N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
600
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
30
T
C = 25 °C
35
Continuous drain current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
22
A
Pulsed drain current a
IDM
96
Linear derating factor
Single pulse avalanche energy b
1.8
W/°C
mJ
W
EAS
PD
226
Maximum power dissipation
227
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dv/dt d
TJ, Tstg
-55 to +150
100
°C
TJ = 125 °C
For 10 s
dv/dt
V/ns
°C
10
Soldering recommendations (peak temperature) c
260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A
c. 1.6 mm from case
d. ISD ≤ ID, di/dt = 100 A/μs, starting TJ = 25 °C
S21-0062-Rev. A, 01-Feb-2021
Document Number: 92375
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000