SIHFZ48RL

更新时间： 2024-11-02 06:13:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	962K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHFZ48RL 数据手册

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Power MOSFET

FEATURES

• Advanced Process Technology

PRODUCT SUMMARY

V_DS(V)

Available

• Dynamic dV/dt

R_DS(on)(Ω)

V_GS= 10 V

0.018

RoHS*

• 175 °C Operating Temperature

• Fast Switching

COMPLIANT

Q_g(Max.) (nC)

110

_gs(nC)

_gd(nC)

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ48/SiHFZ48 for

Linear/Audio Applications

Configuration

Single

• Lead (Pb)-free Available

D²PAK (TO-263)

I²PAK (TO-262)

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced

processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2 W in a typical surface mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRFZ48RSPbF

SiHFZ48RS-E3

IRFZ48RS

I²PAK (TO-262)

IRFZ48RLPbF

Lead (Pb)-free

SnPb

SiHFZ48RL-E3

SiHFZ48RS

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current^e

V_GSat 10 V

I_D

Pulsed Drain Current^{a, e}

I_DM

290

Linear Derating Factor

1.3

W/°C

Single Pulse Avalanche Energy^{b, e}

Maximum Power Dissipation

E_AS

P_D

100

_C= 25 °C

190

Peak Diode Recovery dV/dt^{c, e}

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

- 55 to + 175

300^d

°C

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91296

S-Pending-Rev. A, 22-Jul-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

下载PDF

与SIHFZ48RL相关器件

型号	品牌	获取价格	描述	数据表
SIHFZ48RL-E3	VISHAY	获取价格	Power MOSFET
SIHFZ48RS	VISHAY	获取价格	Power MOSFET
SIHFZ48RS-E3	VISHAY	获取价格	Power MOSFET
SIHFZ48RS-GE3	VISHAY	获取价格	Power MOSFET
SIHFZ48S	VISHAY	获取价格	Power MOSFET
SIHFZ48S-E3	VISHAY	获取价格	Power MOSFET
SIHFZ48S-GE3	VISHAY	获取价格	Power MOSFET
SIHFZ48STL	VISHAY	获取价格	Power MOSFET
SiHG018N60E	VISHAY	获取价格	E Series Power MOSFET
SiHG026N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode