是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.1 | Is Samacsys: | N |
雪崩能效等级(Eas): | 100 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 50 A |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.018 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 190 W |
最大脉冲漏极电流 (IDM): | 290 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SiHG018N60E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SiHG026N60EF | VISHAY |
获取价格 |
EF Series Power MOSFET With Fast Body Diode | |
SiHG039N60E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SiHG039N60EF | VISHAY |
获取价格 |
EF Series Power MOSFET With Fast Body Diode | |
SiHG050N60E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SiHG052N60EF | VISHAY |
获取价格 |
EF Series Power MOSFET With Fast Body Diode | |
SiHG065N60E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SiHG068N60EF | VISHAY |
获取价格 |
EF Series Power MOSFET With Fast Body Diode | |
SiHG080N60E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SiHG085N60EF | VISHAY |
获取价格 |
EF Series Power MOSFET With Fast Body Diode |