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SIHFZ48STL PDF预览

SIHFZ48STL

更新时间: 2024-11-21 06:13:07
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 1000K
描述
Power MOSFET

SIHFZ48STL 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.1Is Samacsys:N
雪崩能效等级(Eas):100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):190 W
最大脉冲漏极电流 (IDM):290 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIHFZ48STL 数据手册

 浏览型号SIHFZ48STL的Datasheet PDF文件第2页浏览型号SIHFZ48STL的Datasheet PDF文件第3页浏览型号SIHFZ48STL的Datasheet PDF文件第4页浏览型号SIHFZ48STL的Datasheet PDF文件第5页浏览型号SIHFZ48STL的Datasheet PDF文件第6页浏览型号SIHFZ48STL的Datasheet PDF文件第7页 
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Advanced Process Technology  
• Surface Mount (IRFZ48S/SiHFZ48S)  
60  
Available  
• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)  
• 175 °C Operating Temperature  
• Fast Switching  
RDS(on) (Ω)  
VGS = 10 V  
0.018  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
110  
29  
• Lead (Pb)-free Available  
Q
Q
gs (nC)  
gd (nC)  
36  
DESCRIPTION  
Configuration  
Single  
Third generation Power MOSFETs from Vishay utilize  
advanced processing techniques to achieve extremely low  
on-resistance per silicon area. This benefit, combined with  
the fast switching speed and ruggedized device design that  
Power MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use in a  
wide variety of applications.  
D
D2PAK (TO-263)  
I2PAK (TO-262)  
G
The D2PAK is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of its  
low internal connection resistance and can dissipate up to 2  
W in a typical surface mount application.  
G
D
S
S
N-Channel MOSFET  
The through-hole version (IRFZ48L/SiHFZ48L) is available  
for low-profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
IRFZ48SPbF  
SiHFZ48S-E3  
IRFZ48S  
D2PAK (TO-263)  
-
-
IRFZ48STRL  
SiHFZ48STL  
I2PAK (TO-262)  
IRFZ48LPbF  
SiHFZ48L-E3  
-
-
Lead (Pb)-free  
SnPb  
SiHFZ48S  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
60  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
50  
50  
Continuous Drain Currentf  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta, e  
IDM  
290  
Linear Derating Factor  
Single Pulse Avalanche Energyb, e  
1.3  
W/°C  
mJ  
EAS  
PD  
100  
TC = 25 °C  
A = 25 °C  
190  
Maximum Power Dissipation  
W
V/ns  
°C  
T
3.7  
Peak Diode Recovery dV/dtc, e  
dV/dt  
4.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d  
TJ, Tstg  
- 55 to + 175  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, Starting TJ = 25 °C, L = 22 µH, RG = 25 Ω, IAS = 72 A (see fig. 12).  
c. ISD 72 A, dI/dt 200 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. Uses IRFZ48/SiHFZ48 data and test conditions.  
f. Calculated continuous current based on maximum allowable junction temperature.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 90377  
S-Pending-Rev. A, 23-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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