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SIHFZ48S-GE3 PDF预览

SIHFZ48S-GE3

更新时间： 2024-11-02 09:25:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 357K
描述
Power MOSFET

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SIHFZ48S-GE3 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.1
Is Samacsys：N雪崩能效等级（Eas）：100 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：50 A最大漏极电流 (ID)：50 A
最大漏源导通电阻：0.018 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：190 W最大脉冲漏极电流 (IDM)：290 A
子类别：FET General Purpose Power表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SIHFZ48S-GE3 数据手册

 浏览型号SIHFZ48S-GE3的Datasheet PDF文件第2页浏览型号SIHFZ48S-GE3的Datasheet PDF文件第3页浏览型号SIHFZ48S-GE3的Datasheet PDF文件第4页浏览型号SIHFZ48S-GE3的Datasheet PDF文件第5页浏览型号SIHFZ48S-GE3的Datasheet PDF文件第6页浏览型号SIHFZ48S-GE3的Datasheet PDF文件第7页 
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
60  
Definition  
• Advanced Process Technology  
• Surface Mount (IRFZ48S, SiHFZ48S)  
• Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)  
• 175 °C Operating Temperature  
• Fast Switching  
R
DS(on) ()  
VGS = 10 V  
0.018  
Qg (Max.) (nC)  
110  
29  
Q
Q
gs (nC)  
gd (nC)  
36  
Configuration  
Single  
• Compliant to RoHS Directive 2002/95/EC  
D
DESCRIPTION  
D2PAK (TO-263)  
I2PAK (TO-262)  
Third generation Power MOSFETs from Vishay utilize  
advanced processing techniques to achieve extremely low  
on-resistance per silicon area. This benefit, combined with  
the fast switching speed and ruggedized device design that  
Power MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use in a  
wide variety of applications.  
G
G
D
S
D
S
G
The D2PAK is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of  
its low internal connection resistance and can dissipate up  
to 2 W in a typical surface mount application.  
S
N-Channel MOSFET  
The through-hole version (IRFZ48L, SiHFZ48L) is available  
for low-profile applications.  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and Halogen-free  
D2PAK (TO-263)  
I2PAK (TO-262)  
-
IRFZ48LPbF  
SiHFZ48L-E3  
SiHFZ48S-GE3  
IRFZ48SPbF  
SiHFZ48S-E3  
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
VDS  
LIMIT  
60  
20  
UNIT  
V
VGS  
T
C = 25 °C  
50  
50  
290  
Continuous Drain Currentf  
VGS at 10 V  
ID  
A
TC = 100 °C  
Pulsed Drain Currenta, e  
IDM  
Linear Derating Factor  
1.3  
100  
190  
3.7  
W/°C  
mJ  
Single Pulse Avalanche Energyb, e  
EAS  
PD  
T
C = 25 °C  
Maximum Power Dissipation  
W
V/ns  
°C  
TA = 25 °C  
Peak Diode Recovery dV/dtc, e  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d  
dV/dt  
TJ, Tstg  
4.5  
- 55 to + 175  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, Starting TJ = 25 °C, L = 22 μH, Rg = 25 , IAS = 72 A (see fig. 12).  
c. ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. Uses IRFZ48, SiHFZ48 data and test conditions.  
f. Calculated continuous current based on maximum allowable junction temperature.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 90377  
S11-1045-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

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