SIHFZ48L

更新时间： 2024-11-02 06:13:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1000K
描述
Power MOSFET

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中文翻译

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数据手册

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SIHFZ48L 数据手册

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Advanced Process Technology

• Surface Mount (IRFZ48S/SiHFZ48S)

Available

• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)

• 175 °C Operating Temperature

• Fast Switching

R_DS(on)(Ω)

V_GS= 10 V

0.018

RoHS*

COMPLIANT

Q_g(Max.) (nC)

110

• Lead (Pb)-free Available

_gs(nC)

_gd(nC)

DESCRIPTION

Configuration

Single

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

D²PAK (TO-263)

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to 2

W in a typical surface mount application.

N-Channel MOSFET

The through-hole version (IRFZ48L/SiHFZ48L) is available

for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRFZ48SPbF

SiHFZ48S-E3

IRFZ48S

D²PAK (TO-263)

IRFZ48STRL

SiHFZ48STL

I²PAK (TO-262)

IRFZ48LPbF

SiHFZ48L-E3

Lead (Pb)-free

SnPb

SiHFZ48S

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current^f

V_GSat 10 V

I_D

Pulsed Drain Current^{a, e}

I_DM

290

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

1.3

W/°C

E_AS

P_D

100

T_C= 25 °C

_A= 25 °C

190

Maximum Power Dissipation

V/ns

°C

3.7

Peak Diode Recovery dV/dt^{c, e}

dV/dt

4.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

T_J, T_stg

- 55 to + 175

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, Starting T_J= 25 °C, L = 22 µH, R_G= 25 Ω, I_AS= 72 A (see fig. 12).

c. I_SD≤ 72 A, dI/dt ≤ 200 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

e. Uses IRFZ48/SiHFZ48 data and test conditions.

f. Calculated continuous current based on maximum allowable junction temperature.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90377

S-Pending-Rev. A, 23-Jul-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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