Datasheet > SIHFZ48L-GE3

SIHFZ48L-GE3

更新时间： 2024-11-02 14:36:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	398K
描述
Power Field-Effect Transistor,

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SIHFZ48L-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.64	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SIHFZ48L-GE3 数据手册

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Advanced process technology

• Surface mount (IRFZ48S, SiHFZ48S)

• Low-profile through-hole (IRFZ48L, SiHFZ48L)

PRODUCT SUMMARY

V_DS(V)

_DS(on)()

V_GS= 10 V

0.018

Available

Q_g(Max.) (nC)

_gs(nC)

_gd(nC)

Configuration

110

• 175 °C operating temperature

• Fast switching

Available

• Material categorization: for definitions of

compliance

please

see

Single

www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.



D²PAK (TO-263)

I²PAK (TO-262)



DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

N-Channel MOSFET

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2 W in a typical surface mount application.

The through-hole version (IRFZ48L, SiHFZ48L) is available

for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

SiHFZ48L-GE3

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHFZ48S-GE3

IRFZ48SPbF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

_C= 25 °C

Continuous Drain Current ^f

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^{a, e}

I_DM

290

Linear Derating Factor

Single Pulse Avalanche Energy ^{b, e}

1.3

W/°C

E_AS

P_D

100

T_C= 25 °C

190

Maximum Power Dissipation

V/ns

°C

T_A= 25 °C

3.7

Peak Diode Recovery dV/dt ^{c, e}

dV/dt

4.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +175

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, Starting T_J= 25 °C, L = 22 μH, R_g= 25 , I_AS= 72 A (see fig. 12).

c. I_SD 72 A, dI/dt  200 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. Uses IRFZ48, SiHFZ48 data and test conditions.

f. Calculated continuous current based on maximum allowable junction temperature.

S15-1659-Rev. D, 20-Jul-15

Document Number: 90377

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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