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SIHFZ44STRL-GE3

更新时间： 2024-11-02 11:57:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 795K
描述
Power MOSFET

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SIHFZ44STRL-GE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：4
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.07
雪崩能效等级（Eas）：100 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：50 A
最大漏极电流 (ID)：50 A最大漏源导通电阻：0.028 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：150 W最大脉冲漏极电流 (IDM)：200 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SIHFZ44STRL-GE3 数据手册

 浏览型号SIHFZ44STRL-GE3的Datasheet PDF文件第2页浏览型号SIHFZ44STRL-GE3的Datasheet PDF文件第3页浏览型号SIHFZ44STRL-GE3的Datasheet PDF文件第4页浏览型号SIHFZ44STRL-GE3的Datasheet PDF文件第5页浏览型号SIHFZ44STRL-GE3的Datasheet PDF文件第6页浏览型号SIHFZ44STRL-GE3的Datasheet PDF文件第7页 
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
Definition  
• Advanced Process Technology  
• Surface Mount (IRFZ44S, SiHFZ44S)  
60  
RDS(on) ()  
VGS = 10 V  
0.028  
Qg (Max.) (nC)  
67  
18  
•
Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)  
• 175 °C Operating Temperature  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
25  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
DESCRIPTION  
Third generation Power MOSFETs from Vishay utilize  
advanced processing techniques to achieve extermely low  
on resistance per silicon area. This benefit, combined with  
the fast switching speed and ruggedized device design that  
power MOSFETs are well known for, provides the designer  
with an extermely efficient reliabel deviece for use in a wide  
variety of applications.  
D
D2PAK (TO-263)  
I2PAK (TO-262)  
G
G
D
The D2PAK is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and lowest possible on-resistance  
in any existing surface mount package. The D2PAK is  
suitable for high current applications because of its low  
internal connection resistance and can dissipate up to 2.0 W  
in a typical surface mount application.  
S
D
S
G
S
N-Channel MOSFET  
The through-hole version (IRFZ44L, SiHFZ44L) is available  
for low profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHFZ44S-GE3  
IRFZ44SPbF  
D2PAK (TO-263)  
D2PAK (TO-263)  
SiHFZ44STRL-GE3a  
IRFZ44STRLPbFa  
SiHFZ44STL-E3a  
I2PAK (TO-262)  
-
IRFZ44LPbF  
SiHFZ44L-E3  
Lead (Pb)-free and Halogen-free  
SiHFZ44STRR-GE3a  
IRFZ44STRRPbFa  
SiHFZ44STR-E3a  
Lead (Pb)-free  
SiHFZ44S-E3  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltagef  
Gate-Source Voltagef  
SYMBOL  
VDS  
LIMIT  
60  
20  
UNIT  
V
VGS  
Continuous Drain Currente  
Continuous Drain Current  
Pulsed Drain Currenta, e  
Linear Derating Factor  
T
C = 25 °C  
50  
36  
200  
1.0  
100  
3.7  
150  
4.5  
VGS at 10 V  
ID  
A
TC = 100 °C  
IDM  
W/°C  
mJ  
Single Pulse Avalanche Energyb  
EAS  
PD  
TA = 25 °C  
TC = 25 °C  
Maximum Power Dissipation  
W
V/ns  
°C  
Peak Diode Recovery dV/dtc, f  
dV/dt  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperatured)  
TJ, Tstg  
- 55 to + 175  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V; starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).  
c. ISD 51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. Calculated continuous current based on maximum allowable junction temperature.  
f. Uses IRFZ44, SiHFZ44 data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91293  
S11-1063-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

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