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SIHFZ44L PDF预览

SIHFZ44L

更新时间: 2024-11-21 06:13:07
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 1480K
描述
Power MOSFET

SIHFZ44L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.14
Is Samacsys:N雪崩能效等级(Eas):100 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHFZ44L 数据手册

 浏览型号SIHFZ44L的Datasheet PDF文件第2页浏览型号SIHFZ44L的Datasheet PDF文件第3页浏览型号SIHFZ44L的Datasheet PDF文件第4页浏览型号SIHFZ44L的Datasheet PDF文件第5页浏览型号SIHFZ44L的Datasheet PDF文件第6页浏览型号SIHFZ44L的Datasheet PDF文件第7页 
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Advanced Process Technology  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• Surface Mount (IRFZ44S, SiHFZ44S)  
RDS(on) (Ω)  
VGS = 10 V  
0.028  
RoHS*  
Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)  
COMPLIANT  
Qg (Max.) (nC)  
67  
18  
• 175 °C Operating Temperature  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
25  
• Lead (Pb)-free Available  
Configuration  
Single  
DESCRIPTION  
Third generation Power MOSFETs from Vishay utilize  
advanced processing techniques to achieve extermely low  
on resistance per silicon area. This benefit, combined with  
the fast switching speed and ruggedized device design that  
power MOSFETs are well known for, provides the designer  
with an extermely efficient reliabel deviece for use in a wide  
variety of applications.  
D
D2PAK (TO-263)  
I2PAK (TO-262)  
G
G
D
The D2PAK is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and lowest possible on-resistance  
in any existing surface mount package. The D2PAK is  
suitable for high current applications because of its low  
internal connection resistance and can dissipate up to 2.0 W  
in a typical surface mount application.  
S
S
N-Channel MOSFET  
The through-hole version (IRFZ44L/SiHFZ44L) is available  
for low profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
IRFZ44SPbF  
SiHFZ44S-E3  
IRFZ44S  
D2PAK (TO-263)  
IRFZ44STRRPbFa  
SiHFZ44STR-E3a  
IRFZ44STRRa  
D2PAK (TO-263)  
IRFZ44STRLPbFa  
SiHFZ44STL-E3a  
IRFZ44STRLa  
I2PAK (TO-262)  
IRFZ44LPbF  
SiHFZ44L-E3  
IRFZ44L  
Lead (Pb)-free  
SnPb  
SiHFZ44S  
SiHFZ44STRa  
SiHFZ44STLa  
SiHFZ44L  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
Drain-Source Voltagef  
Gate-Source Voltagef  
SYMBOL  
LIMIT  
60  
20  
UNIT  
VDS  
VGS  
V
Continuous Drain Currente  
Continuous Drain Current  
Pulsed Drain Currenta, e  
Linear Derating Factor  
T
C = 25 °C  
50  
36  
200  
1.0  
100  
3.7  
150  
4.5  
VGS at 10 V  
ID  
A
TC = 100 °C  
IDM  
W/°C  
mJ  
Single Pulse Avalanche Energyb  
EAS  
PD  
T
A = 25 °C  
TC = 25 °C  
Maximum Power Dissipation  
W
V/ns  
°C  
Peak Diode Recovery dV/dtc, f  
dV/dt  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperatured)  
TJ, Tstg  
- 55 to + 175  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V; starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A (see fig. 12).  
c. ISD 51 A, dI/dt 250 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. Calculated continuous current based on maximum allowable junction temperature.  
f. Uses IRFZ44/SiHFZ44 data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91293  
S-Pending-Rev. A, 23-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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