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SIHFZ44R PDF预览

SIHFZ44R

更新时间: 2024-11-02 06:11:43
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 1242K
描述
Power MOSFET

SIHFZ44R 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.1其他特性:AVALANCHE RATED
雪崩能效等级(Eas):100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIHFZ44R 数据手册

 浏览型号SIHFZ44R的Datasheet PDF文件第2页浏览型号SIHFZ44R的Datasheet PDF文件第3页浏览型号SIHFZ44R的Datasheet PDF文件第4页浏览型号SIHFZ44R的Datasheet PDF文件第5页浏览型号SIHFZ44R的Datasheet PDF文件第6页浏览型号SIHFZ44R的Datasheet PDF文件第7页 
IRFZ44R, SiHFZ44R  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Advanced Process Technology  
PRODUCT SUMMARY  
VDS (V)  
60  
• Ultra Low On-Resistance  
• Dynamic dV/dt Rating  
• 175 °C Operating Temperature  
• Fast Switching  
Available  
RDS(on) (Ω)  
VGS = 10 V  
0.028  
RoHS*  
Qg (Max.) (nC)  
67  
18  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
25  
• Fully Avalanche Rated  
Configuration  
Single  
• Drop in Replacement of the IRFZ44/SiHFZ44 for  
Linear/Audio Applications  
D
• Lead (Pb)-free Available  
TO-220  
DESCRIPTION  
Advanced Power MOSFETs from Vishay utilize advanced  
processing techniques to achieve extremely low  
on-resistance per silicon area. This benefit, combined with  
the fast switching speed and ruggedized device design that  
Power MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use in a  
wide variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
G
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220  
IRFZ44RPbF  
SiHFZ44R-E3  
IRFZ44R  
Lead (Pb)-free  
SnPb  
SiHFZ44R  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Gate-Source Voltage  
VGS  
20  
V
Continuous Drain Currente  
TC = 25 °C  
C = 100 °C  
50  
36  
VGS at 10 V  
ID  
T
A
Continuous Drain Current  
Pulsed Drain Currenta  
IDM  
200  
Linear Derating Factor  
Single Pulse Avalanche Energyb  
1.0  
W/°C  
mJ  
EAS  
PD  
100  
Maximum Power Dissipation  
TC = 25 °C  
150  
W
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d  
- 55 to + 175  
300  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A (see fig. 12).  
c. ISD 51 A, dV/dt 250 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. Current limited by the package, (die current = 51 A).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91292  
S-Pending-Rev. A, 17-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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