Datasheet > SIHD7N60ETL-GE3

SIHD7N60ETL-GE3

更新时间： 2024-11-06 19:42:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	188K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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SIHD7N60ETL-GE3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SIHD7N60ETL-GE3 数据手册

SiHD7N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low Figure-of-Merit (FOM) R_onx Q_g

• Low Input Capacitance (C_iss

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q_g)

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C (Ω)

Q_gmax. (nC)

650

)

V_GS= 10 V

0.6

_gs(nC)

_gd(nC)

Configuration

Single

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

DPAK

(TO-252)

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

• Industrial

- Welding

- Induction Heating

- Motor Drives

N-Channel MOSFET

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHD7N60E-GE3

SiHD7N60ET-GE3

SiHD7N60ETR-GE3

SiHD7N60ETL-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

600

Gate-Source Voltage

V_GS

Gate-Source Voltage AC (f > 1 Hz)

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.63

W/°C

E_AS

P_D

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^d

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

dV/dt

V/ns

°C

300^c

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 13.8 mH, R_g= 25 Ω, I_AS= 2.5 A.

c. 1.6 mm from case.

d. I_SD≤ I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S12-0965-Rev. A, 07-May-12

Document Number: 91510

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SIHD7N60ETL-GE3相关器件

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