Datasheet > SiHB21N65EF-GE3

SiHB21N65EF-GE3

更新时间： 2024-10-31 01:16:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	168K
描述
E Series Power MOSFET with Fast Body Diode

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SiHB21N65EF-GE3 数据手册

SiHB21N65EF

Vishay Siliconix

www.vishay.com

E Series Power MOSFET with Fast Body Diode

FEATURES

• Fast body diode MOSFET using E series

technology

• Reduced t_rr, Q_rr, and I_RRM

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss)

• Low switching losses due to reduced Q_rr

• Ultra low gate charge (Q_g)

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. () at 25 °C

Q_gmax. (nC)

700

V_GS= 10 V

0.18

106

_gs(nC)

_gd(nC)

Configuration

Single

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263)

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Consumer and computing

- ATX power supplies

• Industrial

N-Channel MOSFET

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switch mode power supplies (SMPS)

• Applications using the following topologies

- LCC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHB21N65EF-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

650

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy ^b

1.7

W/°C

E_AS

P_D

367

Maximum Power Dissipation

208

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

Soldering Recommendations (Peak Temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 5.1 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S15-2686-Rev. A, 16-Nov-15

Document Number: 91606

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SiHB21N65EF-GE3相关器件

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SiHB21N80AE	VISHAY	获取价格	E Series Power MOSFET
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SIHB22N60AE-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SIHB22N60AEL-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SIHB22N60E	VISHAY	获取价格	E Series Power MOSFET
SIHB22N60E_14	VISHAY	获取价格	E Series Power MOSFET
SIHB22N60E-E3	VISHAY	获取价格	TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SiHB22N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHB22N60EF-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHB22N60EL	VISHAY	获取价格	EL Series Power MOSFET

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