Datasheet > SiHB22N60EL

SiHB22N60EL

更新时间： 2024-10-31 14:52:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	146K
描述
EL Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHB22N60EL 数据手册

SiHB22N60EL

Vishay Siliconix

www.vishay.com

EL Series Power MOSFET

FEATURES

• Reduced figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

• Reduced switching and conduction losses

• Low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)typ. at 25 °C (Ω)

Q_gmax. (nC)

650

)

V_GS= 10 V

0.171

_gs(nC)

_gd(nC)

Configuration

Single

APPLICATIONS

• Server and telecom power supplies

- Switch mode power supplies (SMPS)

- Power factor correction power supplies (PFC)

• Lighting

D²PAK (TO-263)

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

- Welding

- Induction heating

- Motor drives

N-Channel MOSFET

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHB22N60EL-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy ^b

1.8

W/°C

E_AS

P_D

286

Maximum Power Dissipation

227

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

_DS= 0 V to 80 % V_DS

dV/dt

V/ns

°C

Soldering Recommendations (Peak Temperature) ^c

for 10 s

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 4.5 A.

c. 1.6 mm from case.

d. I_SD≤ I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S15-0746-Rev. A, 20-Apr-15

Document Number: 91640

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与SiHB22N60EL相关器件

型号	品牌	获取价格	描述	数据表
SIHB22N60EL-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Me
SIHB22N60S	VISHAY	获取价格	S Series Power MOSFET
SIHB22N60S-E3	VISHAY	获取价格	S Series Power MOSFET
SiHB22N65E	VISHAY	获取价格	E Series Power MOSFET
SIHB22N65E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
SiHB23N60E	VISHAY	获取价格	E Series Power MOSFET
SIHB23N60E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 23A I(D), 600V, 0.158ohm, 1-Element, N-Channel, Silicon, Me
SIHB24N65E	VISHAY	获取价格	E Series Power MOSFET
SIHB24N65E_13	VISHAY	获取价格	E Series Power MOSFET
SiHB24N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode