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SiHB23N60E PDF预览

SiHB23N60E

更新时间: 2024-10-31 14:54:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 212K
描述
E Series Power MOSFET

SiHB23N60E 数据手册

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SiHB23N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
• Low figure-of-merit (FOM) Ron x Qg  
• Low input capacitance (Ciss  
VDS (V) at TJ max.  
DS(on) max. at 25 °C (Ω)  
Qg max. (nC)  
650  
)
R
VGS = 10 V  
0.158  
• Reduced switching and conduction losses  
• Ultra low gate charge (Qg)  
95  
16  
Q
gs (nC)  
gd (nC)  
• Avalanche energy rated (UIS)  
Q
25  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Configuration  
Single  
D
D2PAK (TO-263)  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
G
D
G
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
S
S
N-Channel MOSFET  
- Welding  
- Induction heating  
- Motor drives  
- Battery chargers  
- Renewable energy  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
Lead (Pb)-free and Halogen-free  
SiHB23N60E-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
V
VGS  
30  
T
C = 25 °C  
23  
15  
Continuous Drain Current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Current a  
IDM  
63  
Linear Derating Factor  
Single Pulse Avalanche Energy b  
1.8  
W/°C  
mJ  
W
EAS  
PD  
353  
Maximum Power Dissipation  
227  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dt d  
TJ, Tstg  
-55 to +150  
37  
°C  
TJ = 125 °C  
for 10 s  
dV/dt  
V/ns  
°C  
34  
Soldering Recommendations (Peak Temperature) c  
300  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 5 A.  
c. 1.6 mm from case.  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
S15-0277-Rev. C, 23-Feb-15  
Document Number: 91552  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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