Datasheet > SIHB30N60E

SIHB30N60E

更新时间： 2024-11-24 12:25:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	199K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHB30N60E 数据手册

SiHB30N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low Figure-of-Merit (FOM) R_onx Q_g

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_gmax. (nC)

650

• Low Input Capacitance (C_iss

)

V_GS= 10 V

0.125

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q_g)

130

_gs(nC)

_gd(nC)

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions please see

www.vishay.com/doc?99912

Configuration

Single

APPLICATIONS

D²PAK (TO-263)

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- LED Lighting

N-Channel MOSFET

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

• Renewable Energy

- Solar (PV Inverters)

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHB30N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

V_DS

600

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

690

W/°C

E_AS

P_D

Maximum Power Dissipation

250

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^d

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

dV/dt

V/ns

°C

300^c

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S12-3103-Rev. E, 24-Dec-12

Document Number: 91453

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SIHB30N60E相关器件

型号	品牌	获取价格	描述	数据表
SIHB33N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB33N60EF	VISHAY	获取价格	EF Series Power MOSFET with Fast Body Diode
SIHB33N60EF-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Me
SIHB33N60E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Me
SIHB33N60ET1-GE3	VISHAY	获取价格	MOSFET N-CH 600V 33A TO263
SIHB33N60ET5-GE3	VISHAY	获取价格	MOSFET N-CH 600V 33A TO263
SiHB35N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB35N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHB35N60E-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHB4N80E	VISHAY	获取价格	E Series Power MOSFET