SiHB24N65E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
• Low Figure-of-Merit (FOM) Ron x Qg
VDS (V) at TJ max.
DS(on) max. at 25 °C ()
Qg max. (nC)
700
R
VGS = 10 V
0.145
122
21
• Low Input Capacitance (Ciss
)
Q
gs (nC)
gd (nC)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
Q
37
Configuration
Single
• Avalanche Energy Rated (UIS)
D
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D2PAK (TO-263)
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
G
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
S
N-Channel MOSFET
D
G
S
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package
D2PAK (TO-263)
SiHB24N65E-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
20
VGS
Gate-Source Voltage AC (f > 1 Hz)
30
TC = 25 °C
C = 100 °C
24
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
T
16
A
Pulsed Drain Currenta
IDM
70
Linear Derating Factor
Single Pulse Avalanche Energyb
2
508
W/°C
mJ
W
EAS
PD
Maximum Power Dissipation
250
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ, Tstg
- 55 to + 150
37
°C
TJ = 125 °C
dV/dt
V/ns
°C
11
300c
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 6 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S11-2088 Rev. B, 31-Oct-11
Document Number: 91477
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000