Datasheet > SiHB22N65E

SiHB22N65E

更新时间： 2024-10-31 14:53:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	207K
描述
E Series Power MOSFET

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SiHB22N65E 数据手册

SiHB22N65E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

D²PAK (TO-263)

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

N-Channel MOSFET

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V)

700

0.18

_DS(on)max. (Ω) at V_GS= 10 V

Q_gtyp. (nC)

_D(A)

- Welding

Configuration

Single

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

D²PAK (TO-263)

SIHB22N65E-GE3

SIHB22N65E-T1-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

650

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

Single pulse avalanche energy ^b

1.8

W/°C

E_AS

P_D

691

Maximum power dissipation

227

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

Soldering recommendations (peak temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 7 A

c. 1.6 mm from case

d. I_SD≤ I_D, dI/dt = 100 A/μs, starting T_J= 25 °C

S21-0115-Rev. C, 15-Feb-2021

Document Number: 91538

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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