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SIHB22N60E-E3 PDF预览

SIHB22N60E-E3

更新时间: 2024-10-30 20:00:31
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 221K
描述
TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3, FET General Purpose Power

SIHB22N60E-E3 技术参数

生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknown风险等级:1.27
Samacsys Description:Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK其他特性:AVALANCHE RATED
雪崩能效等级(Eas):367 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):21 A
最大漏源导通电阻:0.18 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):56 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHB22N60E-E3 数据手册

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SiHB22N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
D
D2PAK (TO-263)  
• Low figure-of-merit (FOM) Ron x Qg  
• Low input capacitance (Ciss  
)
• Reduced switching and conduction losses  
• Ultra low gate charge (Qg)  
G
• Avalanche energy rated (UIS)  
D
G
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
S
N-Channel MOSFET  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
650  
RDS(on) max. () at 25 °C  
VGS = 10 V  
0.18  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
Qg max. (nC)  
86  
11  
Qgs (nC)  
gd (nC)  
Q
24  
Configuration  
Single  
- Welding  
- Induction heating  
- Motor drives  
- Battery chargers  
- Renewable energy  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHB22N60E-GE3  
SiHB22N60ET1-GE3  
SIHB22N60ET5-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
V
VGS  
30  
T
C = 25 °C  
21  
13  
Continuous Drain Current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Current a  
IDM  
56  
Linear Derating Factor  
Single Pulse Avalanche Energy b  
1.8  
W/°C  
mJ  
W
EAS  
PD  
367  
Maximum Power Dissipation  
227  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dt d  
TJ, Tstg  
-55 to +150  
70  
°C  
TJ = 125 °C  
For 10 s  
dV/dt  
V/ns  
°C  
11  
Soldering Recommendations (Peak temperature) c  
300  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.  
c. 1.6 mm from case.  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
S16-1704-Rev. J, 29-Aug-16  
Document Number: 91472  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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