生命周期: | Active | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 1.27 |
Samacsys Description: | Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 367 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 21 A |
最大漏源导通电阻: | 0.18 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 56 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SiHB22N60EF | VISHAY |
获取价格 |
EF Series Power MOSFET With Fast Body Diode | |
SIHB22N60EF-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, | |
SiHB22N60EL | VISHAY |
获取价格 |
EL Series Power MOSFET | |
SIHB22N60EL-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Me | |
SIHB22N60S | VISHAY |
获取价格 |
S Series Power MOSFET | |
SIHB22N60S-E3 | VISHAY |
获取价格 |
S Series Power MOSFET | |
SiHB22N65E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SIHB22N65E-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
SiHB23N60E | VISHAY |
获取价格 |
E Series Power MOSFET | |
SIHB23N60E-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 600V, 0.158ohm, 1-Element, N-Channel, Silicon, Me |