Datasheet > SIHB22N60EF-GE3

SIHB22N60EF-GE3

更新时间： 2024-10-30 19:44:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	138K
描述
Power Field-Effect Transistor,

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SIHB22N60EF-GE3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	1.44	Base Number Matches：	1

SIHB22N60EF-GE3 数据手册

SiHB22N60EF

Vishay Siliconix

www.vishay.com

EF Series Power MOSFET With Fast Body Diode

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

D²PAK (TO-263)

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.158

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- Welding

- Induction heating

Configuration

Single

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and halogen-free

SiHB22N60EF-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

Single pulse avalanche energy ^b

1.4

W/°C

E_AS

P_D

144

Maximum power dissipation

179

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

°C

Soldering recommendations (peak temperature) ^c

260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 3.2 A

c. 1.6 mm from case

d. I_SD I_D, di/dt = 400 A/μs, starting T_J= 25 °C

S19-0120-Rev. A, 04-Feb-2019

Document Number: 92245

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SIHB22N60EF-GE3相关器件

型号	品牌	获取价格	描述	数据表
SiHB22N60EL	VISHAY	获取价格	EL Series Power MOSFET
SIHB22N60EL-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Me
SIHB22N60S	VISHAY	获取价格	S Series Power MOSFET
SIHB22N60S-E3	VISHAY	获取价格	S Series Power MOSFET
SiHB22N65E	VISHAY	获取价格	E Series Power MOSFET
SIHB22N65E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
SiHB23N60E	VISHAY	获取价格	E Series Power MOSFET
SIHB23N60E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 23A I(D), 600V, 0.158ohm, 1-Element, N-Channel, Silicon, Me
SIHB24N65E	VISHAY	获取价格	E Series Power MOSFET
SIHB24N65E_13	VISHAY	获取价格	E Series Power MOSFET

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