Datasheet > SI7880ADP_17

SI7880ADP_17

更新时间： 2024-11-30 01:23:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	305K
描述
N-Channel 30-V (D-S) MOSFET

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SI7880ADP_17 数据手册

Si7880ADP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free available

TrenchFET^®Power MOSFET

PWM Optimized

New Low Thermal Resistance PowerPAK^®Package with

Low 1.07 mm Profile

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

RoHS

0.003 at V_GS= 10 V

0.004 at V_GS= 4.5 V

COMPLIANT

37 nC

•

100 % R_gTested

PowerPAK SO-8

APPLICATIONS

•

DC/DC Converters

- Low-Side MOSFET in Synchronous Buck in Desktops

6.15 mm

5.15 mm

•

Secondary Synchronous Rectifier

Bottom View

Ordering Information: Si7880ADP-T1-E3 (Lead (Pb)-free)

Si7880ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

31^{b, c}

25^{b, c}

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

4.9^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

I_AS

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

5.4^{b, c}

3.4^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t ≤ 10 s

°C/W

Steady State

1.0

1.5

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 65 °C/W.

Document Number: 73414

S-80438-Rev. B, 03-Mar-08

www.vishay.com

12 3 4 5 6 7...13

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与SI7880ADP_17相关器件

型号	品牌	获取价格	描述	数据表
SI7880ADP-T1-E3	VISHAY	获取价格	TRANSISTOR 31 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS,
SI7880ADP-T1-GE3	VISHAY	获取价格	TRANSISTOR 31 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
SI7880DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI7880DP-T1-E3	VISHAY	获取价格	TRANSISTOR 18 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SOP-8, FET Gener
SI7882DP	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
SI7882DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 12V 13A 8-Pin PowerPAK SO T/R
Si7884BDP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SI7884BDP-T1-E3	VISHAY	获取价格	TRANSISTOR 18.5 A, 40 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPA
SI7884DP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SI7884DP-T1	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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