Datasheet > SI4876DY-T1-E3

SI4876DY-T1-E3

更新时间： 2024-09-29 21:10:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	89K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI4876DY-T1-E3 数据手册

Si4876DY

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Available

0.005 at V_GS= 4.5 V

0.0075 at V_GS= 2.5 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

SO-8

Top View

Ordering Information: Si4876DY-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

Si4876DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 85 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_AS

E_AS

I_S

Pulsed Drain Current

Avalanche Current

L = 0.1 mH

Single Avalanche Energy

Continuous Source Current (Diode Conduction)^a

1.3

1.6

0.8

T_A= 25 °C

T_A= 85 °C

3.6

1.9

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71312

S09-0221-Rev. F, 09-Feb-09

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与SI4876DY-T1-E3相关器件

型号	品牌	获取价格	描述	数据表
SI4876DY-T1-GE3	VISHAY	获取价格	TRANSISTOR 14000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMP
SI4878DY	VISHAY	获取价格	Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
SI4878DY-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
SI4880DY	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
SI4880DY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4880DY-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide
SI4882DY	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
SI4882DY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4884	NXP	获取价格	TrenchMOS⑩ logic level FET
SI4884BDY	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET