Datasheet > SI4490DY_13

SI4490DY_13

更新时间： 2022-05-06 23:19:12

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	234K
描述
N-Channel 200-V (D-S) MOSFET

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SI4490DY_13 数据手册

Si4490DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1.0

0.5

= 250 µA

0.0

- 0.5

- 1.0

- 1.5

- 50 - 25

100 125 150

0.01

0.1

100

Time (s)

T - Temperature (°C)

Single Pulse Power

Threshold Voltage

Duty Cycle = 0.5

0.2

0.1

Notes:

0.1

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = R

= 65 °C/W

thJA

(t)

3. T

- T = P

DM thJA

Single Pulse

4. Surface Mounted

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

100

600

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

-4

-3

-2

-1

100

1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?71341.

www.vishay.com

Document Number: 71341

S09-0705-Rev. C, 27-Apr-09

1 2 345 6 7 8

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