Datasheet > SI4497DY

SI4497DY

更新时间： 2022-10-18 18:29:29

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	128K
描述
P-Channel 30 V (D-S) MOSFET

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Si4497DY

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^d

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

0.0033 at V_GS= - 10 V

0.0046 at V_GS= - 4.5 V

- 36

- 29

•

- 30

90 nC

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Adaptor Switch

High Current Load Switch

Notebook

SO-8

Top View

Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 30

V_GS

T_C= 25 °C

- 36

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 29

Continuous Drain Current (T_J= 150 °C)

I_D

- 24.8^{a, b}

- 19.2^{a, b}

- 70

I_DM

I_S

Pulsed Drain Current

- 6.5

- 2.9^{a, b}

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Avalanche Current

- 30

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

_C= 25 °C

_C= 70 °C

_A= 25 °C

7.8

5.0

P_D

Maximum Power Dissipation

3.5^{a, b}

2.2^{a, b}

- 55 to 150

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, c}

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 80 °C/W.

d. Based on T_C= 25 °C.

Document Number: 65748

S10-0639-Rev. A, 22-Mar-10

www.vishay.com

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