Datasheet > SI4490DY_13

SI4490DY_13

更新时间： 2022-05-06 23:19:12

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威世 - VISHAY		/
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描述
N-Channel 200-V (D-S) MOSFET

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SI4490DY_13 数据手册

Si4490DY

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250 µA

Gate Threshold Voltage

2.0

V_DS= 0 V, V_GS

20 V

Gate-Body Leakage

100

V_DS= 160 V, V_GS= 0 V

_DS= 160 V, V_GS= 0 V, T_J= 55 °C

V_DS≥ 5 V, V_GS= 10 V

I_DSS

I_D(on)

Zero Gate Voltage Drain Current

µA

On-State Drain Current^a

V_GS= 10 V, I_D= 4.0 A

0.065

0.070

0.080

0.090

Drain-Source On-State Resistance^a

R_DS(on)

_GS= 6.0 V, I_D= 4.0 A

Forward Transconductance^a

Diode Forward Voltage^a

Dynamic^b

g_fs

V_DS= 15 V, I_D= 5 A

I_S= 2.8 A, V_GS= 0 V

V_SD

0.75

1.2

Q_g

Q_gs

Q_gd

R_g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

7.5

12.0

0.85

_DS= 100 V, V_GS= 10 V, I_D= 4.0 A

0.2

1.3

t_d(on)

t_r

t_d(off)

t_f

_DD= 100 V, R_L= 25 Ω

I_D≅ 4.0 A, V_GEN= 10 V, R_g= 6 Ω

Turn-Off Delay Time

Fall Time

t_rr

I_F= 2.8 A, dI/dt = 100 A/µs

Source-Drain Reverse Recovery Time

100

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

= 10 V thru 6 V

= 125 °C

5 V

25 °C

4 V

- 55 °C

- Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

www.vishay.com

Document Number: 71341

S09-0705-Rev. C, 27-Apr-09

123 4 5 6 7 8

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