Datasheet > SI4496DY-RC

SI4496DY-RC

更新时间： 2024-10-26 09:26:03

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描述
R - C Thermal Model Parameters

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SI4496DY-RC 数据手册

Si4496DY_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Junction to

RT1

Ambient

2.3490

Case

N/A

Foot

250.9288 m

6.7329

RT2

29.5589

32.0670

26.1202

RT3

9.1880

RT4

1.7701

Thermal Capacitance (Joules/°C)

Junction to

CT1

Ambient

1.1969 m

32.0544 m

1.4071

Case

N/A

Foot

563.0696 µ

13.6449 m

174.2752 m

4.8071 m

CT2

CT3

CT4

3.6901

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 74109

Revision 02-Sep-05

www.vishay.com

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