SI4488DY

更新时间： 2024-11-19 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	46K
描述
N-Channel 150-V (D-S) MOSFET

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SI4488DY 数据手册

Si4488DY

Vishay Siliconix

N-Channel 150-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

150

0.050 @ V = 10 V

5.0

SO-8

Top View

Ordering Information: Si4488DY

Si4488DY-T1 (with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

150

"20

= 25_C

= 70_C

5.0

4.0

3.5

2.8

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Avalanch Current

L = 0.1 mH

Continuous Source Current (Diode Conduction)

2.8

3.1

2.0

1.4

1.56

1.0

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71240

www.vishay.com

S-03951—Rev. B, 26-May-03

12 3 4 5

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