Datasheet > SI4490DY_13

SI4490DY_13

更新时间： 2022-05-06 23:19:12

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威世 - VISHAY		/
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描述
N-Channel 200-V (D-S) MOSFET

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SI4490DY_13 数据手册

Si4490DY

Vishay Siliconix

N-Channel 200-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFETs

Compliant to RoHS Directive 2002/95/EC

V_DS(V)

R_DS(on)(Ω)

I_D(A)

4.0

0.080 at V_GS= 10 V

0.090 at V_GS= 6.0 V

200

3.8

•

SO-8

Top View

Ordering Information: Si4490DY-T1-E3 (Lead (Pb)-free)

Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

200

V_GS

T_A= 25 °C

_A= 70 °C

4.0

3.2

2.85

2.3

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_AS

I_S

Pulsed Drain Current

Avalanch Current

L = 0.1 mH

Continuous Source Current (Diode Conduction)^a

2.6

3.1

2.0

1.3

1.56

1.0

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71341

S09-0705-Rev. C, 27-Apr-09

www.vishay.com

12 3 4 5 6 7 8

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