Datasheet > SI4485DY

SI4485DY

更新时间： 2024-11-20 09:26:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	104K
描述
P-Channel 30 V (D-S) MOSFET

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SI4485DY 数据手册

SPICE Device Model Si4485DY

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

DESCRIPTION

CHARACTERISTICS

The attached SPICE model describes the typical electrical

characteristics of the p-channel vertical DMOS. The

subcircuit model is extracted and optimized over the - 55 °C

to + 125 °C temperature ranges under the pulsed 0 V to

10 V gate drive. The saturated output impedance is best fit at

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the - 55 °C to + 125 °C Temperature Range

the gate bias near the threshold voltage.

A novel

gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence

difficulties of the switched C_gdmodel. All model parameter

values are optimized to provide a best fit to the measured

electrical data and are not intended as an exact physical

interpretation of the device.

• Model the Gate Charge, Transient, and Diode Reverse

Recovery Characteristics

SUBCIRCUIT MODEL SCHEMATIC

DBD

–

ETCV

Note

This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to

the appropriate datasheet of the same number for guaranteed specification limits.

Document Number: 65210

S09-1557-Rev. A, 24-Aug-09

www.vishay.com

12 3 4

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