是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 14 V |
最大漏极电流 (Abs) (ID): | 9 A | 最大漏极电流 (ID): | 9 A |
最大漏源导通电阻: | 0.011 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 3 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4477DY | VISHAY |
获取价格 |
P-Channel 20 V (D-S) MOSFET | |
SI4477DY-T1-GE3 | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET | |
SI4480DY | FAIRCHILD |
获取价格 |
80V N-Channel PowerTrench MOSFET | |
SI4480DY | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
SI4480DYD84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal | |
SI4480DY-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4480DYL86Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal | |
SI4480DYL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal | |
SI4480DYS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal | |
SI4480DY-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |