Datasheet > SI4483EDY

SI4483EDY

更新时间： 2022-12-09 04:38:36

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	61K
描述
P-Channel 30-V (D-S) MOSFET

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SI4483EDY 数据手册

Si4483EDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D ESD Protection: 3000 V

APPLICATIONS

0.0085 @ V = −10 V

−14

−11

−30

0.014 @ V = −4.5

D Notebook PC

− Load Switch

− Adapter Switch

SO-8

7100 W

Top View

Ordering Information: Si4483EDY-T1—E3

P-Channel

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−30

"25

= 25_C

= 70_C

−10

−8

−14

−11

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−50

Continuous Source Current (Diode Conduction)

−2.7

3.0

−1.36

1.5

= 25_C

= 70_C

Maximum Power Dissipation

1.9

0.95

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72862

S-42139—Rev. B, 15-Nov-04

www.vishay.com

12 3 4 5

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