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SI4484EY-T1-GE3 PDF预览

SI4484EY-T1-GE3

更新时间: 2024-11-20 20:10:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 178K
描述
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI4484EY-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.83配置:Single
最大漏极电流 (Abs) (ID):4.8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.8 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

SI4484EY-T1-GE3 数据手册

 浏览型号SI4484EY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4484EY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4484EY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4484EY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4484EY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4484EY-T1-GE3的Datasheet PDF文件第7页 
Si4484EY  
Vishay Siliconix  
N-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
6.9  
Definition  
0.034 at VGS = 10 V  
0.040 at VGS = 6.0 V  
TrenchFET® Power MOSFETs  
100  
6.4  
175 °C Maximum Junction Temperature  
PWM Optimized  
Compliant to RoHS Directive 2002/95/EC  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
Ordering Information: Si4484EY-T1-E3 (Lead (Pb)-free)  
Si4484EY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
100  
20  
V
VGS  
TA = 25 °C  
TA = 85 °C  
6.9  
5.4  
4.8  
3.7  
Continuous Drain Current (TJ = 175 °C)a  
ID  
A
IDM  
IAR  
EAR  
IS  
Pulsed Drain Current  
30  
Avalanche Current  
25  
31  
L = 0.1 mH  
Repetitive Avalanche Energy (Duty Cycle 1 %)  
Continuous Source Current (Diode Conduction)a  
mJ  
A
3.1  
3.8  
2.3  
1.5  
1.8  
1.1  
TA = 25 °C  
TA = 85 °C  
Maximum Power Dissipationa  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
33  
Maximum  
Unit  
t 10 s  
40  
85  
21  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
70  
°C/W  
RthJF  
17  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71189  
S09-1341-Rev. D, 13-Jul-09  
www.vishay.com  
1

SI4484EY-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI4102DY-T1-GE3 VISHAY

类似代替

N-Channel 100 V (D-S) MOSFET
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