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SI4483ADY-T1-GE3 PDF预览

SI4483ADY-T1-GE3

更新时间: 2024-02-17 00:13:03
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
11页 236K
描述
P-Channel 30 V (D-S) MOSFET

SI4483ADY-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
风险等级:3.83Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4483ADY-T1-GE3 数据手册

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Si4483ADY  
Vishay Siliconix  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)d  
- 19.2  
- 14.6  
Qg (Typ.)  
Definition  
0.0088 at VGS = - 10 V  
0.0153 at VGS = - 4.5 V  
TrenchFET® Power MOSFET  
100 % Rg Tested  
100 % UIS Tested  
- 30  
44.8 nC  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Adaptor Switch  
S
SO-8  
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
Top View  
D
Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
- 30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
25  
T
C = 25 °C  
C = 70 °C  
- 19.2  
- 15.4  
- 13.5a, b  
- 10.9a, b  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
- 70  
Pulsed Drain Current  
- 4.9  
TC = 25 °C  
Continuous Source-Drain Diode Current  
- 2.4a, b  
20  
TA = 25 °C  
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
20  
mJ  
W
TC = 25 °C  
TC = 70 °C  
5.9  
3.8  
PD  
Maximum Power Dissipation  
2.9a, b  
1.9a, b  
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta, c  
Symbol  
Typical  
33  
Maximum  
Unit  
RthJA  
RthJF  
t 10 s  
Steady State  
42  
21  
°C/W  
Maximum Junction-to-Foot  
16  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Maximum under steady state conditions is 85 °C/W.  
d. Based on TC = 25 °C.  
Document Number: 68982  
S10-2543-Rev. B, 08-Nov-10  
www.vishay.com  
1

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