January 2001
Si4480DY
80V N-Channel PowerTrench MOSFET
General Description
Features
• 7.6 A, 80 V. RDS(ON = 0.029 Ω @ VGS = 10 V
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
)
RDS(ON) = 0.033 Ω @ VGS = 6 V.
• Low gate charge (34nC typical).
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
• High power and current handling capability.
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
80
V
V
A
20
±
(Note 1a)
(Note 1a)
7.6
50
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
C
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°
Thermal Characteristics
θ
θJC
(Note 1a)
(Note 1)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
50
25
C/W
C/W
JA
°
°
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
4480
Si4480DY
13’’
12mm
2500 units
2001 Fairchild Semiconductor International
Si4480DY Rev. A