Datasheet > SI4480DYL99Z

SI4480DYL99Z

更新时间： 2024-11-21 06:58:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	90K
描述
Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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SI4480DYL99Z 数据手册

January 2001

Si4480DY

80V N-Channel PowerTrench MOSFET

General Description

Features

• 7.6 A, 80 V. R_DS(ON= 0.029 Ω @ V_GS= 10 V

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers.

)

R_DS(ON)= 0.033 Ω @ V_GS= 6 V.

• Low gate charge (34nC typical).

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R_DS(ON)

specifications.

• Fast switching speed.

• High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power supply

designs with higher overall efficiency.

• High power and current handling capability.

SO-8

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

7.6

P_D

Power Dissipation for Single Operation

2.5

(Note 1b)

(Note 1c)

1.2

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

θ^JC

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

C/W

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

4480

Si4480DY

13’’

12mm

2500 units

2001 Fairchild Semiconductor International

Si4480DY Rev. A

12 3 4 5

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