Datasheet > SI4480DYD84Z

SI4480DYD84Z

更新时间： 2024-02-08 07:05:18

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关光电二极管晶体管
页数	文件大小	规格书
5页	90K
描述
Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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技术参数
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SI4480DYD84Z 技术参数

生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G8	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.32	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	80 V	最大漏极电流 (ID)：	7.6 A
最大漏源导通电阻：	0.029 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

SI4480DYD84Z 数据手册

January 2001

Si4480DY

80V N-Channel PowerTrench MOSFET

General Description

Features

• 7.6 A, 80 V. R_DS(ON= 0.029 Ω @ V_GS= 10 V

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers.

)

R_DS(ON)= 0.033 Ω @ V_GS= 6 V.

• Low gate charge (34nC typical).

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R_DS(ON)

specifications.

• Fast switching speed.

• High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power supply

designs with higher overall efficiency.

• High power and current handling capability.

SO-8

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

7.6

P_D

Power Dissipation for Single Operation

2.5

(Note 1b)

(Note 1c)

1.2

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

θ^JC

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

C/W

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

4480

Si4480DY

13’’

12mm

2500 units

2001 Fairchild Semiconductor International

Si4480DY Rev. A

12 3 4 5

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