Datasheet > SI4465ADY_17

SI4465ADY_17

更新时间： 2024-09-17 01:24:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	696K
描述
P-Channel 1.8-V (G-S) MOSFET

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SI4465ADY_17 数据手册

Si4465ADY

Vishay Siliconix

P-Channel 1.8-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^b

- 13.7

- 12.4

- 10

Q_g(Typ.)

V_DS(V)

R_DS(on)(Ω)

Available

TrenchFET^®Power MOSFET

1.8 V Rated

0.009 at V_GS= - 4.5 V

0.011 at V_GS= - 2.5 V

0.016 at V_GS= - 1.8 V

•

55 nC

- 8

• 100 % R_gTested

SO-8

Top View

Ordering Information: Si4465ADY-T1-E3 (Lead (Pb)-free)

Si4465ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

- 8

Unit

V_GS

T_A= 25 °C

- 13.7

- 11

T_A= 70 °C

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

- 20

T_C= 70 °C

- 16

I_DM

I_S

- 40

Pulsed Drain Current

- 2.5

Continuous Source Current (Diode Conduction)^{a, b}

I_SM

T_A= 25 °C

T_A= 70 °C

T_C= 25 °C

T_C= 70 °C

3.0

1.95

6.5

Maximum Power Dissipation^{a, b}

P_D

4.2

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient (MOSFET)^a

Maximum Junction-to-Foot (Drain)

R_thJA

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t ≤ 10 s.

Document Number: 73856

S09-0393-Rev. B, 09-Mar-09

www.vishay.com

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