Datasheet > SI4465DY-T1

SI4465DY-T1

更新时间： 2024-11-21 01:26:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	78K
描述
P-Channel 1.8-V (G-S) MOSFET

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SI4465DY-T1 数据手册

Si4465DY

Vishay Siliconix

P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.009 @ V = –4.5 V

–14

–12

–10

0.011 @ V = –2.5 V

–8

0.016 @ V = –1.8 V

SO-8

Top View

Ordering Information: Si4465DY-T1

Si4465DY-T1–E3 (Lead (Pb)–free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

–8

Unit

Drain-Source Voltage

Gate-Source Voltage

= 25 C

= 70 C

–14

–11

a, b

Continuous Drain Current (T = 150 C)

Pulsed Drain Current

–40

a, b

Continuous Source Current (Diode Conduction)

–2.1

= 25 C

= 70 C

2.5

a, b

Maximum Power Dissipation

1.6

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Maximum Junction-to-Ambient

thJA

C/W

Steady State

Notes

a. Surface Mounted on FR4 Board.

b. t v10 sec.

Document Number: 70830

S-51472—Rev. C, 01-Aug-05

www.vishay.com

12 3 4 5

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