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SI4470EY-T1-E3 PDF预览

SI4470EY-T1-E3

更新时间: 2024-11-20 22:53:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 83K
描述
MOSFET N-CH 60V 9A 8-SOIC

SI4470EY-T1-E3 数据手册

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Si4470EY  
Vishay Siliconix  
N-Channel 60 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)  
12.7  
11.7  
Definition  
0.011 at VGS = 10 V  
0.013 at VGS = 6.0 V  
TrenchFET® Power MOSFETs  
60  
175 °C Maximum Junction Temperature  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Primary Side Switch  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
Ordering Information: Si4470EY-T1-E3 (Lead (Pb)-free)  
Si4470EY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
60  
20  
V
VGS  
TA = 25 °C  
A = 70 °C  
12.7  
10.6  
9.0  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
7.5  
IDM  
IAS  
IS  
Pulsed Drain Current  
Avalanche Current  
50  
A
L = 0.1 mH  
50  
Continuous Source Current (Diode Conduction)a  
3.1  
3.75  
2.6  
1.5  
TA = 25 °C  
TA = 70 °C  
1.85  
1.3  
Maximum Power Dissipationa  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
33  
Maximum  
Unit  
t 10 s  
40  
80  
21  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
65  
°C/W  
RthJF  
17  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 71606  
S10-2137-Rev. D, 20-Sep-10  
www.vishay.com  
1

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