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SI4438DY-T1-GE3 PDF预览

SI4438DY-T1-GE3

更新时间: 2024-11-06 21:13:19
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 101K
描述
N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

SI4438DY-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):24 A最大漏源导通电阻:0.0027 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):70 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4438DY-T1-GE3 数据手册

 浏览型号SI4438DY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4438DY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4438DY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4438DY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4438DY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4438DY-T1-GE3的Datasheet PDF文件第7页 
Si4438DY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
36  
Available  
0.0027 at VGS = 10 V  
0.004 at VGS = 4.5 V  
TrenchFET® Power MOSFET  
100 % Rg Tested  
30  
41 nC  
29  
APPLICATIONS  
DC-to-DC and AC-to-DC Oring Diode Applications  
SO-8  
D
S
D
D
D
D
1
2
3
4
8
7
6
5
S
S
G
G
Top View  
S
Ordering Information: Si4438DY-T1-E3 (Lead (Pb)-free)  
Si4438DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
TC = 25 °C  
TC = 70 °C  
36  
29  
Continuous Drain Current (TJ = 150 °C)  
ID  
24b, c  
TA = 25 °C  
19b, c  
70  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
7.0  
Continuous Source-Drain Diode Current  
3.0b, c  
7.8  
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
5.0  
PD  
Maximum Power Dissipation  
W
3.5b, c  
T
2.2b, c  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Symbol  
Typical  
29  
Maximum  
Unit  
RthJA  
t 10 s  
35  
16  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
Steady State  
13  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 80 °C/W.  
Document Number: 73581  
S09-0228-Rev. B, 09-Feb-09  
www.vishay.com  
1

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