是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
包装说明: | , | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.33 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 15 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3.5 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4442DY-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI4446DY | VISHAY |
获取价格 |
N-Channel 40-V (D-S) MOSFET | |
SI4446DY-T1-GE3 | VISHAY |
获取价格 |
MOSFET N-CH D-S 40V 8-SOIC | |
Si4447ADY | VISHAY |
获取价格 |
P-Channel 40 V (D-S) MOSFET | |
SI4447ADY-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 7.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal | |
SI4447DY-T1-E3 | VISHAY |
获取价格 |
MOSFET P-CH 40V 3.3A 8-SOIC | |
SI4447DY-T1-GE3 | VISHAY |
获取价格 |
MOSFET P-CH 40V 3.3A 8-SOIC | |
SI4448DY-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 32A I(D), 12V, 1-Element, N-Channel, Silicon, Metal- | |
SI4448DY-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 32A I(D), 12V, 1-Element, N-Channel, Silicon, Metal- | |
SI4450DY | FAIRCHILD |
获取价格 |
60V N-Channel PowerTrench MOSFET |