Datasheet > SI3455DV_05

SI3455DV_05

更新时间： 2024-12-01 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	89K
描述
P-Channel 30-V (D-S) MOSFET

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SI3455DV_05 数据手册

Si3455DV

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

Available

D Lead (Pb)-Free Version is RoHS

0.100 @ V = −10 V

"3.5

"2.5

Compliant

−30

0.190 @ V = −4.5 V

(4) S

TSOP-6

Top View

(3) G

3 mm

(1, 2, 5, 6) D

P-Channel MOSFET

2.85 mm

Ordering Information: Si3455DV-T1

Si3455DV-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

−30

"20

= 25_C

= 70_C

"3.5

Continuous Drain Current (T = 150_C)

"2.7

"20

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

−1.7

= 25_C

= 70_C

2.0

Maximum Power Dissipation

1.3

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

thJA

_C/W

62.5

Notes

a. Surface Mounted on FR4 Board, t v 5 sec.

For SPICE model information via the Worldwide Web: http://www.Siliconix.com/www/product/spice.htm

Document Number: 70194

S-50694—Rev. E, 18-Apr-05

www.vishay.com

12 3 4 5

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