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RN2108ACT PDF预览

RN2108ACT

更新时间： 2024-11-14 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
6页 150K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN2108ACT 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-N3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.71
Is Samacsys：N其他特性：BUILT-IN BIAS RESISTOR RATIO IS 2.14
外壳连接：COLLECTOR最大集电极电流 (IC)：0.08 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-N3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

RN2108ACT 数据手册

 浏览型号RN2108ACT的Datasheet PDF文件第2页浏览型号RN2108ACT的Datasheet PDF文件第3页浏览型号RN2108ACT的Datasheet PDF文件第4页浏览型号RN2108ACT的Datasheet PDF文件第5页浏览型号RN2108ACT的Datasheet PDF文件第6页 
RN2107ACT~RN2109ACT  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN2107ACT,RN2108ACT,RN2109ACT  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Top View  
0.6±0.05  
0.5±0.03  
• Extra small package (CST3) is applicable for extra high density  
fabrication.  
• Incorporating a bias resistor into a transistor reduces parts count.  
３
• Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
１
２
• Complementary to RN1107ACT to RN1109ACT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit and Bias Resistor Values  
C
1.BASE  
2.EMITTER  
3.COLLECOTR  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
CST3  
RN2107ACT  
RN2108ACT  
RN2109ACT  
10  
22  
47  
47  
47  
22  
R1  
B
JEDEC  
JEITA  
―
―
TOSHIBA  
2-1J1A  
E
Weight: 0.75 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2107ACT to RN2109ACT  
Collector-emitter voltage  
RN2107ACT  
−6  
Emitter-base voltage  
V
V
RN2108ACT  
RN2109ACT  
−7  
EBO  
−15  
Collector current  
I
−80  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100*  
150  
C
RN2107ACT to RN2109ACT  
T
j
T
stg  
−55 to 150  
°C  
* : Mounted on FR4 board (10 mm × 10 mm × 1 mm)  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant  
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2010-04-06  
123456

中文翻译

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与RN2108ACT相关器件

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SOT-883
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RN2108CT(TPL3) TOSHIBA

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 		PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
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RN2108F(F) TOSHIBA

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2108F(TE85L,F) TOSHIBA

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108F(TPL3) TOSHIBA

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108F(TPL3,F) TOSHIBA

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108FS TOSHIBA

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 		TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General
RN2108FV TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera

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