Datasheet > RN2108ACT(TPL3)

RN2108ACT(TPL3)

更新时间： 2024-09-26 14:44:31

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	152K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SOT-883

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN2108ACT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83
最大集电极电流 (IC)：	0.08 A	最小直流电流增益 (hFE)：	80
元件数量：	1	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.1 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN2108ACT(TPL3) 数据手册

RN2107ACT~RN2109ACT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2107ACT, RN2108ACT, RN2109ACT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

Top View

0.6±0.05

0.5±0.03

• Extra small package (CST3) is applicable for extra high density

fabrication.

• Incorporating a bias resistor into a transistor reduces parts count.

３

• Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

２

• Complementary to RN1107ACT to RN1109ACT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

1.BASE

2.EMITTER

3.COLLECOTR

Type No.

R1 (kΩ)

R2 (kΩ)

CST3

RN2107ACT

RN2108ACT

RN2109ACT

JEDEC

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

CBO

CEO

RN2107ACT to RN2109ACT

Collector-emitter voltage

RN2107ACT

−6

Emitter-base voltage

RN2108ACT

RN2109ACT

−7

EBO

−15

Collector current

−80

°C

Collector power dissipation

Junction temperature

Storage temperature range

100*

150

RN2107ACT to RN2109ACT

stg

−55 to 150

°C

* : Mounted on FR4 board (10 mm × 10 mm × 1 mm)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Start of commercial production

2004-08

2014-03-01

12 3 4 5 6

中文翻译

下载PDF

与RN2108ACT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2108CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2108CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN2108F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2108F(F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2108F(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108F(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108F(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2108FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General
RN2108FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN2108MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

与RN2108ACT(TPL3)相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

9
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

12
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

19

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2108ACT(TPL3)

RN2108ACT(TPL3) 技术参数

RN2108ACT(TPL3) 数据手册

与RN2108ACT(TPL3)相关器件

与RN2108ACT(TPL3)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2108ACT(TPL3)

RN2108ACT(TPL3) 技术参数

RN2108ACT(TPL3) 数据手册

与RN2108ACT(TPL3)相关器件

与RN2108ACT(TPL3)相关文章

您还可以找

您在本页遇到什么问题？