Datasheet > RMPA1963

RMPA1963

更新时间： 2024-09-14 21:55:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器功率放大器过程控制系统 PCS
页数	文件大小	规格书
7页	103K
描述
US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module

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中文翻译

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技术参数
数据手册

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RMPA1963 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.82	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	23 dB
最大输入功率 (CW)：	10 dBm	最大工作频率：	1910 MHz
最小工作频率：	1850 MHz	最高工作温度：	85 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND LOW POWER
最大电压驻波比：	2.5	Base Number Matches：	1

RMPA1963 数据手册

PRELIMINARY

May 2005

RMPA1963

US-PCS CDMA, CDMA2000-1X and WCDMA

Power Amplifier Module

Features

General Description

■ 38% CDMA/WCDMA efficiency at +28 dBm Pout

The RMPA1963 Power Amplifier Module (PAM) is Fairchild’s lat-

est innovation in 50 Ohm matched, surface mount modules tar-

geting US-PCS CDMA/WCDMA/HSDPA and Wireless Local

Loop (WLL) applications. Answering the call for ultra-low DC

power consumption and extended battery life in portable elec-

tronics, the RMPA1963 uses novel proprietary circuitry to dra-

matically reduce amplifier current at low to medium RF output

power levels (< +16 dBm), where the handset most often oper-

ates. A simple two-state Vmode control is all that is needed to

reduce operating current by more than 50% at 16 dBm output

power, and quiescent current (Iccq) by as much as 70% com-

pared to traditional power-saving methods. No additional cir-

cuitry, such as DC-to-DC converters, are required to achieve

this remarkable improvement in amplifier efficiency. Further, the

4x4x1.5 mm LCC package is pin-compatible and a drop-in

replacement for last generation 4x4 mm PAMs widely used

today, minimizing the design time to apply this performance-

enhancing technology. The multi-stage GaAs Microwave Mono-

lithic Integrated Circuit (MMIC) is manufactured using Fairchild

RF’s InGaP Heterojunction Bipolar Transistor (HBT) process.

■ 14% CDMA/WCDMA efficiency (85 mA total current) at

+16 dBm Pout

■ Meets HSDPA performance requirements

■ Linear operation in low-power mode up to +19 dBm

■ Low quiescent current (Iccq): 25 mA in low-power mode

■ Single positive-supply operation with low power and shut-

down modes

• 3.4V typical Vcc operation

• Low Vref (2.85V) compatible with advanced handset

chipsets

■ Compact Lead-free compliant LCC package –

(4.0 X 4.0 x 1.5 mm nominal)

■ Industry standard pinout

■ Internally matched to 50 Ohms and DC blocked RF

input/output

■ Meets IS-95/CDMA2000-1XRTT/WCDMA performance

requirements

Device

Functional Block Diagram

(Top View)

MMIC

Vcc1

Vcc2

GND

INPUT

MATCH

RF IN

GND

OUTPUT

MATCH

RF OUT

GND

Vmode

Vref

BIAS/MODE SWITCH

GND

11 (paddle ground on package bottom)

www.fairchildsemi.com

RMPA1963

Rev. H

12 3 4 5 6 7

中文翻译

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与RMPA1963相关器件

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RMPA1965	FAIRCHILD	获取价格	US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module
RMPA1965_06	FAIRCHILD	获取价格	US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge TM Power Amplifier Module
RMPA1966	FAIRCHILD	获取价格	RMPA1966 I-Lo TM WCDMA Band II Power Amplifier Module, 1850-1910 MHz
RMPA1966_07	FAIRCHILD	获取价格	WCDMA Band II Power Amplifier Module
RMPA1967	FAIRCHILD	获取价格	US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge? Power Amplifier Module
RMPA2059	FAIRCHILD	获取价格	WCDMA PowerEdge Power Amplifier Module
RMPA2259	FAIRCHILD	获取价格	28 dBm WCDMA PowerEdge Power Amplifier Module
RMPA2263	FAIRCHILD	获取价格	WCDMA Power Amplifier Module 1920-1980 MHz
RMPA2265	FAIRCHILD	获取价格	Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
RMPA2266	FAIRCHILD	获取价格	WCDMA Band I Power Amplifier Module

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