RMPA2451-TB

更新时间： 2024-09-14 21:55:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器功率放大器
页数	文件大小	规格书
7页	489K
描述
2.4?2.5 GHz GaAs MMIC Power Amplifier

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数据手册

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RMPA2451-TB 数据手册

April 2004

RMPA2451

2.4–2.5 GHz GaAs MMIC Power Amplifier

General Description

Features

Fairchild Semiconductor’s RMPA2451 is

partially

• 38% power added efficiency

matched monolithic power amplifier in a surface mount

package for use in wireless applications in the 2.4 to 2.5

GHz ISM frequency band. The amplifier may be biased for

linear, class AB or class F for high efficiency applications.

External matching components are required to optimize the

RF performance. The MMIC chip design utilizes our

0.25µm power Pseudomorphic High Electron Mobility

(PHEMT) process.

• 29dBm typical output power

• Small package outline: 0.28" x 0.28" x 0.07"

• Low power mode: 0 dBm

Device

Absolute Ratings

Symbol

Vd1, Vd2

Vg1, Vg2

Vd–Vg

Parameter

Positive Drain DC Voltage

Min

Max

Units

Negative Gate DC Voltage

Simultaneous Drain to Gate Voltage

RF Input Power (from 50Ω source)

Drain Current, First Stage

Drain Current, Second Stage

Gate Current

-5

+10

dBm

°C

Id1

Id2

525

Channel Temperature

175

Operating Case Temperature

Storage Temperature Range

Thermal Resistance (Channel to Case)

-40

°C

CASE

STG

125

°C

°C/W

RMPA2451 Rev. B

12 3 4 5 6 7

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